januray 2014 thermal characteristics fqd11p06 / FQU11P06 p-channel qfet ? mosfet -60 v, -9.4 a, 185 m? description www.fairchildsemi.com 1 fqd11p06 / FQU11P06 p-channel qfet ? mosfet this p-channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications.. features ? -9.4 a, -60 v, r ds(on) = 185 m? (max.) @ v gs = -10 v, i d = -4.7 a ? low gate charge (typ. 13 nc) ? low crss (typ. 45 pf) ? 100% avalanche tested absolute maximum ratings t c = 2 5c unless otherwise noted. symbol parameter fqd11p06tm / FQU11P06tu unit v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -9.4 a - continuous (t c = 100c) -5.95 a i dm drain current - pulsed (note 1) -37.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) -9.4 a e ar repetitive avalanche energy (note 1) 3.8 mj dv/dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 38 w - derate above 25c 0.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 c symbol parameter fqd11p06tm / FQU11P06tu unit r ? jc thermal resistance, junction to case, max . 3.28 o c/w r ? ja thermal resistance, j unction to ambi ent ( m inimum p ad of 2 - oz copper), max. 110 thermal resistance, junction to ambient (*1 in 2 p ad of 2-oz c opper), max. 50 ?2000 fairchild semi cond uctor corporation fqd11p06 / FQU11P06 rev. c2 g d s i-pak d-pak g s d g s d
package marking and ordering information www.fairchildsemi.com 2 fqd11p06 / FQU11P06 p-channel qfet ? mosfet electrical characteristics t c = 25c unl ess otherwise noted. part number top mark package reel size tape width quantity fqd11p06 fqd11p06tm d-pak 330 mm 16 mm 2500 units packing method tape and reel notes: 1. repetitive r ati ng : pulse-width limited by maximum junction temperature. 2. l = 2.1 mh, i as = -9.4 a, v dd = -25 v, r g = 25 ?, starting t j = 25c. 3. i sd -11.4 a, di/dt 300 a/s, v dd bv dss, starting t j = 25c. 4. essentially independe nt of operating temperature. symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v ? bv dss / ?t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.07 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -4.7 a -- 0.15 0.185 ? g fs forward transconductance v ds = -30 v, i d = -4.7 a -- 4.9 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 420 550 pf c oss output capacitance -- 195 250 pf c rss reverse transfer capacitance -- 45 60 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -5.7 a, r g = 25 ? (note 4) -- 6.5 25 ns t r turn-on rise time -- 40 90 ns t d(off) turn-off delay time -- 15 40 ns t f turn-off fall time -- 45 100 ns q g total gate charge v ds = -48 v, i d = -11.4 a, v gs = -10 v (note 4) -- 13 17 nc q gs gate-source charge -- 2.0 -- nc q gd gate-drain charge -- 6.3 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -9.4 a i sm maximum pulsed drain-source diode forward current -- -- -37.6 a v sd drain-source diode forward voltage v gs = 0 v, i s = -9.4 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -11.4 a, di f / dt = 100 a/ s -- 83 -- ns q rr reverse recovery charge -- 0.26 -- c ?2000 fairchild semicond uctor corporation fqd11p06 / FQU11P06 rev. c2 FQU11P06 FQU11P06tu i-pak n/a n/a 70 units tube
www.fairchildsemi.com 3 fqd11p06 / FQU11P06 p-channel qfet ? mosfet typical characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 0 0 1 20 0 3 0 4 50 0.0 0.2 0.4 0.6 0.8 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 2 68 4 1 0 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = -30v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] 10 -1 0 10 1 10 -1 10 0 10 1 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] 10 -v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 v ds = -30v v ds = -48v note : i d = -11.4 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] -v ds , drain-source voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics ?2000 fairchild semi cond uctor corporation fqd11p06 / FQU11P06 rev. c 2
www.fairchildsemi.com 4 fqd11p06 / FQU11P06 p-channel qfet ? mosfet typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 3.28 /w m ax. 2. d uty f acto r, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 25 50 75 100 125 150 0 2 4 6 8 10 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -4.7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature t 1 , s q ua re w a ve p u lse d ura tio n [sec] figure 11. transient thermal response curve t 1 p dm t 2 z ? jc (t), thermal response [ o c/w] ?2000 fairchild semi cond uctor corporation fqd11p06 / FQU11P06 rev. c 2
www.fairchildsemi.com 5 fqd11p06 / FQU11P06 p-channel qfet ? mosfet figure 12. gate charge test circuit & waveform f igure 13. resistive switc hing test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms vv dsds vv gsgs 1010%% 90%90% tt d(d(onon)) tt rr tt onon tt ofofff tt d(d(ofofff)) tt ff vv dddd vv dsds rr ll dutdut rr gg vv gsgs chchargargee vv gsgs qq gg qq gsgs qq gdgd vv gsgs dudutt vv dsds 300300nfnf 50k50k ? 200n200nff 12v12v samsamee t tyypepe as as dudutt e ee as as as - - -- === 2 1 2 1 2 1 2 1 --- --- ------ lll asasas iii bvbv dsdsss 222 --- --- ---- ---- ---- ---- ---- ---- ----- ----- bv bv dsdsss -v-v dddd vv dddd vv dsds bvbv dssdss t t pp vv dddd ii asas vv ds ds (t)(t) ii d d (t(t)) titimmee dudutt rr gg lll iii ddd t t pp i g = const. vv gsgs vv gsgs ?2000 fairchild semicond uctor corporation fqd11p06 / FQU11P06 rev . c2
www.fairchildsemi.com 6 fqd11p06 / FQU11P06 p-channel qfet ? mosfet f igure 15. pe ak diode recovery dv/dt test circuit & waveforms ?? dutdut vv dsds ++ __ drivdriverer rr gg comcompplliimmentent ofof dutdut (n-(n-cchannelhannel)) vv gsgs ?? ddvv//dtdt ccoontntrroolllleed d bbyy rr gg ii sdsd ccononttrrolollleded byby pupullsse e peperriiodod vv dddd lll ii sdsd 1010vv vv gsgs ( ( drivdriver er )) ii sdsd ( ( dut dut )) vv dsds ( ( dut dut )) vv dddd bobodydy ddiiooddee forforwward ard vvololttagage e drdropop ii fmfm ,, bobodydy ddiiodode e ffororwwaarrd d ccuurrrrenentt vv sdsd bobodydy ddiiodode e rreevveerrssee ccuurrrrenentt ii rmrm bobodydy didiodode e rreecovcoveerryy dvdv/d/dtt didi//dtdt d d d = = = - - --- -- -- gate gate gate ------------------ --------- p p pul ul uls s s -------- -------- -------- e e e w w wi i id d d ----- ----- ----- t t th h h - - - gaga ga te te te pu pu pull l ss s e e e pepe pe rr r ii i odod od ?2000 fairchild semicond uctor corporation fqd11p06 / FQU11P06 rev . c2
www.fairchildsemi.com 7 fqd11p06 / FQU11P06 p-channel qfet ? mosfet mechanical dimensions ?2000 fairchild semiconductor corporation fqd11p06 / FQU11P06 rev . c 2 figure 16 . to252 (d-pak), mo lded, 3-lead, option aa&ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
www.fairchildsemi.com 8 fqd11p06 / FQU11P06 p-channel qfet ? mosfet mechanical dimensions ?2000 fairchild semi conductor corporation f qd11p06 / fq u11p06 rev. c 2 figure 17. to251 (i-pak), mo lded, 3-lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to251-003
www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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fqd11p06 / FQU11P06 p-channel qfet ? mosfet ?2000 fairchild semiconductor corporation fqd11p06 / FQU11P06 rev . c 2
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